Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-05T21:29:18.548Z Has data issue: false hasContentIssue false
  • English
  • Français

Transport and Microstructure of Microcrystalline Silicon Alloys

Published online by Cambridge University Press:  28 February 2011

G. Lucovsky ,
C. Wang ,
M. J. Williams ,
Y. L. Chen  and
D. M. Mauer
G. Lucovsky
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
C. Wang
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
M. J. Williams
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
Y. L. Chen
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
D. M. Mauer
Affiliation:
Departments of Physics, and Materials Science and Engineering North Carolina State University, Raleigh, NC 27695–8202, USA
Get access

Abstract

The microstructure and electrical properties of μc-Si and μc-Si,C prepared by remote plasma-enhanced chemical-vapor deposition, PECVD, are reviewed. The microstructure has been characterized by transmission electron microscopy, TEM, infrared, IR, absorption and Raman scattering. The electrical properties were characterized by temperature-dependent dark-conductivity measurements. These studies have explained significant quantitative differences between the carrier transport properties of μc-Si and μc-Si,C alloys in terms of a band offset model for the interfacial potential steps between the amorphous and crystalline constituents of these material systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 443
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] LeComber, P.G., J. Non-Cryst. Solids 115, 1 (1989).Google Scholar
[2] Matsumoto, Y., Hirata, G., Takakura, H., Okamoto, H. and Hamakawa, Y., J. Appl. Phys. 67, 6538 (1990).Google Scholar
[3] Lucovsky, G., Tsu, D.V., Rudder, R.A. and Markunas, R.J. in Thin Film Process II, ed. by Vossen, J.L. and Kern, W. (Academic Press, New York, 1991), p. 565.Google Scholar
[4] Wang, C., Lucovsky, G. and Williams, M.J., J. Vac. Sci. and Technol. A 9, 444 (1990).Google Scholar
[5] Chen, Y.L., Wang, C., Lucovsky, G., Maher, D.M. and Lucovsky, G., J. Vac. Sci. and Technol. A 10, 874 (1991).Google Scholar
[6] Beyer, W. and Overhof, H., in Semiconductors and Semimetals, Vol. 21C, ed by Pankove, J.I. (Academic Press, New York, 1984), p. 257.Google Scholar
[7] Stuke, J., J. Non-Cryst. Solids 59&60, 1 (1983).Google Scholar
[8] He, Y., Yen, Y., Wu, R. and Chen, K., J. Non-Cryst. Solids 59&60, 831 (1983).Google Scholar
[9] Williams, M.J., Wang, C., and Lucovsky, G., J. of Non-Cryst. Solids 137&138, 737 (1991).Google Scholar
[10] Williams, M.J., Wang, C., and Lucovsky, G., MRS Symp. Proc. 219, 389 (1991).Google Scholar
[11] Turner, W.A., Williams, M.J. and Lucovsky, G., MRS. Symp. Proc. Fall 1992.Google Scholar
[12] Orton, J.W. and Powell, M.J., Repts. Progr. Phys. 43, 1263 (1980).Google Scholar
[13] Lucovsky, G., Wang, C. and Chen, Y.L., J. Vac. Sci. and Technol. A 10, 2025 (1991).Google Scholar
[14] LeComber, P.G. and Spear, W.E., AIP Conf. Proc. 31, 284 (1976).Google Scholar