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Trimethylamine Gallane as a Precursor to Cubic Gallium Nitride and Gallium Arsenide. Metal Hydride Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Wayne L. Gladfelter ,
Jen-Wei Hwang ,
Everett C. Phillips ,
John F. Evans ,
Scott A. Hanson  and
Klavs F. Jensen
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Jen-Wei Hwang
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Everett C. Phillips
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
John F. Evans
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Scott A. Hanson
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology 66-250, Cambridge, MA 02139
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Abstract

Cyclo-trigallazane, [H2GaNH2]3, is known to form bulk powders of the new cubic phase of gallium nitride upon pyrolysis. An explanation for this unusual example where the molecular structure of the precursor controls the crystal structure of the solid state product is presented. In a hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor, arsine was found to react with TMAG to form films of polycrystalline GaAs which were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The growth rates for smooth films was 1-4 μm/h. In a low pressure CVD reactor, elemental arsenic vapor was also found to react with the TMAG to give GaAs thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 83
Copyright
Copyright © Materials Research Society 1991

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References

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