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Tunable and Wireless Photoimpedance Light Sensor

Published online by Cambridge University Press:  24 October 2014

Tanuj Saxena ,
Sergey Rumyantsev ,
Partha Dutta  and
Michael Shur
Tanuj Saxena
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Sergey Rumyantsev
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Partha Dutta
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Michael Shur
Affiliation:
Department of E.C.S.E, Rensselaer Polytechnic Institute, Troy, NY 12180, USA Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy NY 12180, USA
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Abstract

We report on the effects of the frequency dispersion in light sensitive materials used in photoimpedance wireless sensors. An example of such a sensor is a gated semiconductor connecting two or more fixed capacitances. The impedance of the device under illumination is changed by the change in the photoresistance of the semiconductor layer and the change in the gate-semiconductor capacitance. We report on the design and simulation of the frequency dispersion of the impedance of this device in silicon and discuss the physics and device performance. We also evaluate the dynamic range and sensitivity of the wireless photoimpedance sensors and show their advantages for wireless sensing applications compared to more conventional light sensors.

Keywords

Siphotoconductivitydevices
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1666: Symposium A – Film-Silicon Science and Technology , 2014 , mrss14-1666-a12-02
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

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