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Tunnel radiation in the luminescence spectra of GaN-based heterostructures

Published online by Cambridge University Press:  11 February 2011

A. E. Yunovich ,
V. E. Kudryashov ,
A. N. Turkin ,
M. Leroux  and
S. Dalmasso
A. E. Yunovich
Affiliation:
M.V. Lomonosov Moscow State University, Dept. of Physics, Vorobiovy Gory, 119899, Moscow, Russia
V. E. Kudryashov
Affiliation:
M.V. Lomonosov Moscow State University, Dept. of Physics, Vorobiovy Gory, 119899, Moscow, Russia
A. N. Turkin
Affiliation:
M.V. Lomonosov Moscow State University, Dept. of Physics, Vorobiovy Gory, 119899, Moscow, Russia
M. Leroux
Affiliation:
CRHEA -CNRS, Valbonne, France
S. Dalmasso
Affiliation:
CRHEA -CNRS, Valbonne, France
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Abstract

Tunnel effects in luminescence spectra and electrical properties of LEDs based on InGaN/GaN-heterostructures made by different technological groups were studied. The tunnel radiation in a spectral region of 1.9 - 2.7 eV predominates at low currents (J<0.2 mA). The position of the tunnel luminescence maximum orħħωmax is approximately equal to the voltage U, orħħωmax = eU. The low energy spectral band is described by the theory of tunnel radiative recombination. Tunnel recombination mechanisms in GaN-based heterostructures are caused by high electric fields in the active InGaN/GaN - MQW layers. The energy diagram of the structures is analyzed. The probability of tunnel radiation is higher due to piezoelectric fields in InGaN quantum wells. The tunnel radiation spectral band was not observed in the more effective LEDs with modulated doped MQWs. The spectra of GaN-based LEDs are compared with tunnel radiation spectra of GaAs-, InP- and GaSb- based LEDs. The equation: orħħωmax = eU describes experimental data in various semiconductors in the range 0.5–2.7 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.4
Copyright
Copyright © Materials Research Society 2003

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References

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