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Twinning Effects in Hg1−xCdxTe (x∼0.2) Grown by Thm in The <111> Direction

Published online by Cambridge University Press:  21 February 2011

Eliezer Weiss ,
Ehud Kedar  and
Nili Mainzer
Eliezer Weiss
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. 0. Box 2250, Haifa 31021, Israel
Ehud Kedar
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. 0. Box 2250, Haifa 31021, Israel
Nili Mainzer
Affiliation:
SCD — Semi-Conductor Devices, Dept. 99, P. 0. Box 2250, Haifa 31021, Israel
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Abstract

Hg1−xCdxTe crystals with x∼0.2 were grown by the traveling heater method (THM), in either the [111]A or [111]B directions, using oriented CdTe seeds. Twins are sometimes formed during the growth of these crystals. In crystals grown in the [11]A direction the twins, of orientation [511]B, are constantly growing at the expense of the original [111]A oriented grain. Growth in the [111]B direction, on the other hand, suppresses the growth of the twin domain. Photodiodes and capacitors realized on the (111)A plane are markedly superior to those on the twin plane, (511)B. The difference is due to higher fixed charge and larger fast surface state densities in the case of the (511)B plane. These effects are explained by the lattice structures in the {111} and {511} planes and their possible influence on surface reactivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 417
Copyright
Copyright © Materials Research Society 1993

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References

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