Hostname: page-component-745bb68f8f-lrblm Total loading time: 0 Render date: 2025-01-29T23:52:01.558Z Has data issue: false hasContentIssue false
  • English
  • Français

Two-Dimensional Damage Distributions Induced by Localized Ion Implantations

Published online by Cambridge University Press:  28 February 2011

M. M. Faye ,
L. Laanab ,
J. Beauvillain ,
A. Claverie ,
C. Vieu  and
G. Benassayag
M. M. Faye
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
L. Laanab
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
J. Beauvillain
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
A. Claverie
Affiliation:
CEMES-LOE/CNRS, 29 rue J. Marvig, 31055 Toulouse, France
C. Vieu
Affiliation:
L2M/CNRS, 196 avenue H. Ravera, 92225 Bagneux, France
G. Benassayag
Affiliation:
L2M/CNRS, 196 avenue H. Ravera, 92225 Bagneux, France
Get access

Abstract

A general method is presented for calculating the spatial distribution of damage generated by localized implantation in semiconductors. Implantation through masks and focused ion beam implantation in GaAs are simulated and compared to cross-sectional transmission electron microscopy observations. An excellent agreement is obtained when a depth-dependent lateral straggle is considered. Arbitrarily shaped mask edges and different compositions for the mask and the substrate are included in the calculations as well as realistic current profiles of the ion spot in the case of focused ion beam implantations. Simulations and experiments clearly demonstrate the potential application of localized implantations to fabricate lateral quantum nanostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 783
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Deppe, D.G. and Holonyak, N. Jr, J. Appl. Phys. 64 (12), 593 (1988)Google Scholar
[2] Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49 (19), 1275 (1986)Google Scholar
[3] Hirayama, Y., Tarucha, S., Suzuki, Y. and Okamoto, H., Phys. Rev. B37 (5), 2774 (1988)Google Scholar
[4] Claverie, A., Vieu, C., Faure, J. and Beauvillain, J., Appl. Surf. Sci. 43, 106 (1989)Google Scholar
[5] Biersack, J.P. and Haggmark, L.G., Nucl. Instr. Meth. B182/183, 199 (1981)Google Scholar
[6] Winterbon, K.B., Ion implantation ranges and energy deposition distributions, volume 2, IFI/plenum (1975)Google Scholar
[7] Brice, D.K., Ion implantation ranges and energy deposition distributions, volume 1, IFI/plenum (1975)Google Scholar
[8] Faye, M.M., Beauvillain, J., Salles, Ph., Laanab, L., Yahia-messaoud, A., Martinez, A. and Claverie, A., to be published in J. Appl. Phys, December 1992 Google Scholar
[9] Vieu, C., Claverie, A., Faure, J. and Beauvillain, J., Nucl. Instr. Meth. B36, 137 (1989)Google Scholar
[10] Ashworth, D.G., Oven, R. and Mundin, B., J. Phys. D: Appl. Phys. 23, 870 (1990)Google Scholar
[11] Stein, H.J., Vook, F.L., Brice, D.K., Borders, J.A. and Picraux, S.T., in proceedings of the 1st International Conference on Ion Implantation (Gordon and Breach, London, 1971), p. 17 Google Scholar
[12] Beauvillain, J., Claverie, A., Akmoum, K., J. Phys. III (France) 2, 407 (1992)Google Scholar
[13] Benassayag, G., Vieu, C., Gierak, J., Planel, R. and Schneider, M., J; Vac. Sci. Technol. B9 (5), 2679 (1991)Google Scholar
[14] Akmoum, K., PhD. Thesis University of Toulouse 1991 Google Scholar