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Two-Dimensional Profiling of Dopants in Semiconductor Devices Using Preferential Etching/Tem Method

Published online by Cambridge University Press:  10 February 2011

H. Kimura  and
K. Shimizu
H. Kimura
Affiliation:
Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakaharaku, Kawasaki, Kanagawa, 211, JAPAN
K. Shimizu
Affiliation:
Analysis and Evaluation Technology Center, NEC Corporation, 1753 Shimonumabe, Nakaharaku, Kawasaki, Kanagawa, 211, JAPAN
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Abstract

We present a sample preparation technique for using transmission electron microscopy (TEM) to profile the dopant in a specified doped region of a very large scale integrated (VLSI) devices. This technique is based on preferential etching of the doped region in silicon. Because the rate at which silicon is etched depends on the dopant concentration, the dopant distribution can be inferred by observing the thickness fringe. Using two-beam approximation and information on the dependence of the etching rate on the concentration, we calculated the intensity of the transmitted electron beam and found that the results agreed well with the observed fringes. In addition, by using a focused ion beam (FIB), we could also observe the dopant distribution in a specified source region of a VLSI device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 480: Symposium Z – Specimen Preparation for Transmission Electron Microscopy…IV , 1997 , 83
Copyright
Copyright © Materials Research Society 1997

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