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Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

Published online by Cambridge University Press:  10 February 2011

G. Lucovsky  and
B. Hinds
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, NC State University, Raleigh, NC 27695–8202
B. Hinds
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, NC State University, Raleigh, NC 27695–8202
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Abstract

Device quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 355
Copyright
Copyright © Materials Research Society 1997

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References

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