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Ultra Shallow Junctions Optimization with Non Doping Species Co-implantation

Published online by Cambridge University Press:  01 February 2011

Nathalie Cagnat ,
Cyrille Laviron ,
Daniel Mathiot ,
Blandine Duriez ,
Julien Singer ,
Romain Gwoziecki ,
Frédéric Salvetti ,
Benjamin Dumont  and
Arnaud Pouydebasque
Nathalie Cagnat
Affiliation:
nathalie.cagnat@st.com, STMicroelectronics, Ion Implantation R&D, 850, rue Jean Monnet, Crolles, France, 38926, France, Metropolitan
Cyrille Laviron
Affiliation:
cyrille.laviron@st.com, LETI, CEA-Grenoble, Grenoble, France, 38054, France, Metropolitan
Daniel Mathiot
Affiliation:
Daniel.Mathiot@iness.c-strasbourg.fr, InESS, Strasbourg, France, 67037, France, Metropolitan
Blandine Duriez
Affiliation:
blandine.duriez@philipscrolles.st.com, Philips, Crolles, France, 38926, France, Metropolitan
Julien Singer
Affiliation:
julien.singer@philipscrolles.st.com, Philips, Crolles, France, 38926, France, Metropolitan
Romain Gwoziecki
Affiliation:
romain.gwoziecki@st.com, LETI, CEA-Grenoble, Grenoble, France, 38054, France, Metropolitan
Frédéric Salvetti
Affiliation:
frederic.salvetti@philipscrolles.st.com, Philips, Crolles, France, 38926, France, Metropolitan
Benjamin Dumont
Affiliation:
benjamin.dumont@st.com, STMicroelectronics, Crolles, France, 38926, France, Metropolitan
Arnaud Pouydebasque
Affiliation:
arnaud.pouydebasque@philipscrolles.st.com, Philips, Crolles, France, 38926, France, Metropolitan
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Abstract

The permanent decrease of the transistor size to improve the performances of integrated circuits must be accompanied by a permanent decrease of the depth of the source-drain junctions. At the same time, in order to keep acceptable sheet resistance values, the dopant concentration in the source-drain areas has to be continuously increased. A possible technological way to meet the junction depth and abruptness requirements is to use co-implantation of non doping species with classical implantations, especially for light ions as B or P.

In order to clarify the complex interactions occurring during these co-implantation processes, we have performed an extensive experimental study of the effect of Ge, F, N, C and their combinations on boron. A special interest was given to the overall integration issues. We will show that it is required to optimize the respective locations of co-implanted species with respect to the B profiles (more precisely the ion implantation damage locations), as well as the co-implanted species doses, to get an acceptable compromise between the efficient diffusion decrease required for the junction abruptness and depth, and a reasonable current leakages.

Keywords

ion-implantationBdiffusion
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C01-02
Copyright
Copyright © Materials Research Society 2006

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