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The Ultrafast Carrier Dynamics in Semiconductors: The Role of Defects

Published online by Cambridge University Press:  26 February 2011

P. M. Fauchet ,
G. W. Wicks ,
Y. Kostoulas ,
A. I. Lobad  and
K. B. Ucer
P. M. Fauchet
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester NY 14623 also with The Institute of Optics
G. W. Wicks
Affiliation:
also with The Institute of Optics
Y. Kostoulas
Affiliation:
also with the Department of Physics & Astronomy
A. I. Lobad
Affiliation:
also with the Department of Physics & Astronomy
K. B. Ucer
Affiliation:
also with the Department of Electrical Engineering
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Abstract

The presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 171
Copyright
Copyright © Materials Research Society 1995

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