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Ultra-Pure Processing: a Key Challenge for Ion Implantation Processing for Fabrication of ULSI Devices

Published online by Cambridge University Press:  21 February 2011

M. I. Current  and
L. A. Larson
M. I. Current
Affiliation:
Applied Materials, Implant Division, 3050 Bowers Avenue, Santa Clara, CA 95054 USA
L. A. Larson
Affiliation:
National Semiconductor, 2900 Semiconductor Drive, Santa Clara, CA 95052 USA
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Abstract

A key issue in modern ion implantation processing is the requirement for dramatic improvements in the purity of the incident ion beam and reductions in the deposition of foreign materials onto the wafer surface. These deposited materials include particles as well as sputtered and vapor deposited metals and dopants. Physical mechanisms which effect the elemental purity of atoms arriving at the surface of ion implanted wafers and progress towards achieving implantation purity levels of below 100 ppm of the implanted dose for sputtered metal and dopant films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 365
Copyright
Copyright © Materials Research Society 1989

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