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Ultraviolet Laser Ablation of a Silicon Wafer

Published online by Cambridge University Press:  25 February 2011

Masahiro Kawasaki ,
Hiroyasu Sato  and
Gen Inoue
Masahiro Kawasaki
Affiliation:
Research Institute of Applied Electricity, Hokkaido University, Sapporo 060, Japan
Hiroyasu Sato
Affiliation:
Chemistry Department of Resources, Mi'e University, Tsu 514, Japan
Gen Inoue
Affiliation:
National Institute for Environmental Studies, Yatabe, Tsukuba 305, Japan
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Abstract

Pulsed laser irradiation at 248 nm can ablate Si atoms from an Si wafer. The mechanism of this photoablation has been examined by laser-induced fluorescence analysis of the Si products. The Si atoms are measured to leave the wafer surface with averaged translational energy of 2.5 kcal/mol. The distribution of translational energy is well described by the theoretical model for non-cascade ablation processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 371
Copyright
Copyright © Materials Research Society 1989

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References

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