Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-29T10:02:49.776Z Has data issue: false hasContentIssue false
  • English
  • Français

Ultraviolet light emitting diodes using non-polar A-plane AlGaN multiple quantum wells

Published online by Cambridge University Press:  01 February 2011

Ramya Chandrasekaran ,
Anirban Bhattacharyya ,
Ryan France ,
Christos Thomidis ,
Adrian Williams  and
Theodore Moustakas
Ramya Chandrasekaran
Affiliation:
ramyac@bu.edu, Boston University, Electrical Engineering, 8, Saint Mary's Street, Boston, MA, 02215, United States, 617-353-1496
Anirban Bhattacharyya
Affiliation:
anirban@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Ryan France
Affiliation:
Rfrance@Bu.Edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Christos Thomidis
Affiliation:
cthomidi@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Adrian Williams
Affiliation:
adrian@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Theodore Moustakas
Affiliation:
tdm@bu.edu, Boston University, Electrical Engineering, Boston, MA, 02215, United States
Get access

Abstract

In this paper, we report the growth and fabrication of non-polar A-plane AlGaN multiple quantum well based ultraviolet light emitting diodes (UV-LEDs). The LEDs were grown on R-plane sapphire substrates using molecular beam epitaxy (MBE). The Current-voltage characteristics of the fabricated devices demonstrated rectifying behavior with a series resistance of 38 ohms. An electro-luminescence emission at 338 nm was obtained.

Keywords

molecular beam epitaxy (MBE)luminescencedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-08
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bhattacharyya, A., Friel, I, Iyer, S., Chen, T.C., Li, W., Cabalu, J., Fedyunin, Y., Ludwig, K.F. Jr., Moustakas, T.D., Maruska, H.P., Hill, D.W., Gallagher, J.J., Chou, M.C., Chai, B., J.Crystal Growth, 487–493, 251 (2003)Google Scholar
[2] Ng, H.M., Appl.Phy.Lett. 80, 4369 (2002)Google Scholar
[3] Craven, M. D., Waltereit, P., Speck, J. S., DenBaars, S. P., Appl.Phy.Lett. 84, 496 (2004)Google Scholar
[4] Chitnis, Ashay, Chen, Changqing, Adivarahan, Vinod, Shatalov, Maxim, Kuokstis, Edmundas, Mandavilli, Vasavi, Yang, Jinwei, Khan, M.Asif, Appl.Phy.Lett. 84, 3663 (2004)Google Scholar
[5] Chakraborty, Arpan, Haskell, Benjamin A., Keller, Stacia, Speck, James S., Denbaars, Steven P., Nakamura, Shuji and Mishra, Umesh K., Jpn. J. Appl. Phys. Vol. 44, L173 (2005)Google Scholar
[6] Chen, Changqing, Adivarahan, Vinod, Yang, Jinwei, Shatalov, Maxim, Uokstis, Edmundask and Khan, Muhammad Asif, Jpn. J. Appl. Phys. Vol. 42, L1039 (2003)Google Scholar
[7] Chandrasekaran, R., Ozcan, A.S., Deniz, D., Ludwig, K.F. and Moustakas, T. D., “Growth of non-polar (1120) and semi-polar (1126) AlN and GaN films on the R-plane sapphire”, Physica Status Solidi (accepted for publication)Google Scholar