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Ultraviolet Photoresponse of Pure and Al doped ZnO Polycrystalline Thin Films by Inkjet Printing

Published online by Cambridge University Press:  31 January 2011

Yan Wu ,
Takahiko Tamaki ,
Wolfgang Voit ,
Lyubov M. Belova  and
K. V. Rao
Yan Wu
Affiliation:
yanwu@kth.se, Royal Institute of Technology, Materials Science, Stockholm, Sweden
Takahiko Tamaki
Affiliation:
Tamaki@mse.kth.se, Royal Institute of Technology, Materials Science, Stockholm, Sweden
Wolfgang Voit
Affiliation:
Wolfgang@mse.kth.se, Royal Institute of Technology, Materials Science, Stockholm, Sweden
Lyubov M. Belova
Affiliation:
belova@mse.kth.se, Royal Institute of Technology, Materials Science, Stockholm, Sweden
K. V. Rao
Affiliation:
rao@kth.se, Royal Institute of Technology, Materials Science, Stockholm, Sweden
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Abstract

Pure ZnO, and Al doped ZnO, 120 -300 nm thin films on glass substrates, were synthesized by inkjet printing technique using zinc and aluminum acetate solution as precursors and a two stage heat treatment process to obtain polycrystalline hexagonal wurtzite structure with the mean grain size of 25 and 30 nm respectively. All films exhibit a transmittance above 85-90% in the visible wavelength range below 700 nm. In the Al doped films the UV absorption spectra show a strong absorption onset below 380nm followed by shoulders centered around 325 nm depending on the film thickness. The electrical conductivity of Al doped ZnO thin films is larger by two orders of magnitude than that for pure ZnO films while the photoconductivity increases by about three orders of magnitude under UV irradiation. The photoresponse of the films with UV irradiation in terms of the rise and decay times in the frequency range from 5 to 500 Hz is also presented and discussed.

Keywords

photoconductivityink-jet printingthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1161: Symposium I – Engineered Multiferroics–Magnetoelectric Interactions, Sensors and Devices , 2009 , 1161-I03-22
Copyright
Copyright © Materials Research Society 2009

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References

[1] Sirringhaus, H.. Adv. Mater, 17, 2411–2425 (2005).Google Scholar
[2] Dimitrakopoulos, C. D. Malenfant, P. R. L. Adv. Mater, 14, 99–117 (2002).Google Scholar
[3] Ridley, B. A. Nivi, B. Jacobson, J. M.. Science, 286, 746–749 (1999).Google Scholar
[4] Look, D.C.. Mater. Sci. Eng. B, 80, 383–387 (2001).Google Scholar
[5] Takahashi, Y. Kanamori, M. Kondoh, A.. Jpn.J.Appl. Phys. 33, 6611–6615 (1994).Google Scholar
[6] Sharma, P. Sreenivas, K. Rao, K.V.. J.Appl. Phy, 93, 3963–3970 (2003).Google Scholar
[7] Gonzalez, A.E.J., Urueta, J.A.S., Parra, R.S., J. Crystal Growth, 192, 430–438 (1998).Google Scholar
[8] Xu, Z.Q. Deng, H. Xie, J. Li, Y. Zu, X. T.. Appli. Surf. Sci, 253, 476–479 (2006).Google Scholar
[9] Wang, P.L. Deng, H. Wei, M.. Semic. Optoele. 29, 666–668 (2008).Google Scholar
[10] Cullity, B.. Elements of X-ray Diffraction, 2nd ed. (Addison-Wesley, 1978), p 102.Google Scholar
[11] Kim, Yong-Sung, Tai, Weon-Pil. Appli. Surf. Sci. 253, 4911–4916 (2007).Google Scholar
[12] Singh, A.V., Mehra, R. M. Yoshida, A. and Wakahara, A.. J. Apli. Phy. 95, 3640–3643 (2004).Google Scholar
[13] Liu, M. Kim, H.K.. J.Appl.Phys.Lett. 84, 173–175 (2004).Google Scholar
[14] Dulub, O. Boatner, L.A. and Diebold, U. Surf. Sci. 519, 201–2017 (2002).Google Scholar
[15] Rothschild, A. Komem, Y. and Ashkenasy, N. J. Appl. Phys. 92, 7090–7097 (2002).Google Scholar