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Uniform Quantum Wire and Quantum Dot Arrays by Natural Self-Faceting on Patterned Substrates

Published online by Cambridge University Press:  10 February 2011

Richard Nötzel
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany, notzel@pdi-berlin.de
Jörg Fricke
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Zhichuan Niu
Affiliation:
Department of Materials Science, Photonic Materials and Devices Laboratory, University of Southern California, Los Angeles, California 90089-0241, USA
Uwe Jahn
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Klaus-Jürgen Friedland
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Manfred Ramsteiner
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Hans-Peter Schönherr
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Achim Trampert
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
Klaus H. Ploog
Affiliation:
Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
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Abstract

The combination of self-organized growth on high-index substrates with lithographic patterning and atomic hydrogen assistance allows the fabrication of GaAs quantum wires and quantum dots as well as coupled wire-dot arrays with superior structural and electronic properties by molecular beam epitaxy. The selectivity of patterned growth on high-index substrates differs qualitatively from that on low-index ones thus producing quantum wire and quantum dot structures which fulfill the stringent criteria on the geometrical features to be met for useful devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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