Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-01-15T07:18:09.132Z Has data issue: false hasContentIssue false
  • English
  • Français

Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy

Published online by Cambridge University Press:  10 February 2011

R. Hickman ,
J. M. Van Hove ,
P. P. Chow ,
J. J. Klaassen ,
A. M. Wowchack  and
C. J. Polley
R. Hickman
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
J. M. Van Hove
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
P. P. Chow
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
J. J. Klaassen
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
A. M. Wowchack
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
C. J. Polley
Affiliation:
SVT Associates, 7620 Executive Dr., Eden Prairie, MN 55344, rhickman@svta.com
Get access

Abstract

X-band performance, high temperature DC operation, and uniformity have been evaluated for 1 μm gate AlGaN/GaN HEMTs grown by RF atomic nitrogen plasma MBE. Deposition and fabrication were performed on 2-inch (0001) saphirre substrates to determine process uniformity. HEMTs with 300 μm total gate width and dual gate finger geometry have been fabricated with 650–700 cm2/V s mobility. Maximum frequency cut-offs on the order of of 8–10 were achieved. DC performance at room temperature was >500 mA/mm, and external transconductance was >70mS/mn. The transistors operated at test temperatures of 425°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 405
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Aktas, O., et al., Appl. Phys. Lett., 69, 3872 (1996).Google Scholar
[2] Gasks, R., et al., IEEE Electron Device Lett., 18, 492 (1997).Google Scholar
[3] Hove, J. M. Van, to be published in the GaN and Related Materials Symposium Proceedings, Mater. Res. Soc. 1997 Spring Meeting.Google Scholar
[4] Kapoor, V., et al., Electrochem. Soc. Symp. Proc. 95–6, 245 (1996).Google Scholar