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Universal glass dynamics in PCM nano-glasses

Published online by Cambridge University Press:  01 February 2011

I. V. Karpov
Affiliation:
ilya.v.karpov@intel.com, Intel Corporation, 2200 Mission College Blvd, RNB 3-01, Santa Clara, CA, 95051, United States
M. Mitra
Affiliation:
mukut.mitra2@utoledo.edu, University of Toledo, Department of Physics & Astronomy, 2801 W.Bancroft Street, MS 111, Toledo, OH, 43606, United States
D. Kau
Affiliation:
derchang.kau@intel.com, Intel Corporation, 2200 Mission College Blvd, RNB 3-01, Santa Clara, CA, 95051, United States
G. Spadini
Affiliation:
gianpaolo.spadini@intel.com, Intel Corporation, 2200 Mission College Blvd, RNB 3-01, Santa Clara, CA, 95051, United States
V. G. Karpov
Affiliation:
vkarpov@utoledo.edu, University of Toledo, Department of Physics & Astronomy, 2801 W.Bancroft Street, MS 111, Toledo, OH, 43606, United States
Y. A. Kryukov
Affiliation:
yevgen.kryukov@utoledo.edu, University of Toledo, Department of Physics & Astronomy, 2801 W.Bancroft Street, MS 111, Toledo, OH, 43606, United States
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Abstract

The classical double well potential (DWP) model known to explain many phenomena in glasses, is extended to the nano glasses of chalcogenide phase change memory (PCM). We describe simple analytical expressions for the temporal drift of PCM reset parameters. The threshold voltage Vth and the amorphous state resistance R are shown to drift with the time (t) as deltaVth ∝ ν propotional to ln t and R proportional to t power alpha respectively in broad intervals spanning many decades in time. These dependencies saturate at long enough times that can be shorten with temperature increase. All the available data on the PCM drift are shown to be fully consistent with DWP model.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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