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The Use of 2-Mev He+ Microbeams for Ion-Beam Mixing of Bi-Layer Systems

Published online by Cambridge University Press:  26 February 2011

John B Davis  and
R.E. Benenson
John B Davis
Affiliation:
Dept. of Physics, SUNY at Albany, Albany, NY 12222
R.E. Benenson
Affiliation:
Dept. of Physics, SUNY at Albany, Albany, NY 12222
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Abstract

We have observed ion-beam mixing in three bi-layer targets, Sb/Si, Cu/Si and Cu/Al, using 2-MeV He+ beams of 4 – 9 urn width. Detailed investigation of Cu/Al revealed that 1) the depth of the mixed layer exhibits a linear dependence on dose, equivalent to 80 A for every 1018 He+ ions/cm2; 2) there is evidence of lateral diffusion of the mixed atoms away from the line of application of the beam; and 3) the sputtering coefficient for 2.0-MeV He+ on Cu is 0.07 sputtered atoms per ion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 295
Copyright
Copyright © Materials Research Society 1991

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