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Use of Dilute HF With Controlled Oxygen for Post Cu CMP Cleans

Published online by Cambridge University Press:  10 February 2011

K. K. Christenson  and
C. Pizetti
K. K. Christenson
Affiliation:
FSI International, 322 Lake Hazeltine Dr., Chaska, MN 55318, kchristenson@fsi-intl.com
C. Pizetti
Affiliation:
Metron Technologies Europe, christian3@compuserve.com
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Abstract

Wet cleaning of wafers during the semiconductor production process often requires uniform removal of a few nanometers of material. Ideally, a single cleaning chemistry can be found that etches all exposed features at a comparable rate. Etch rates near 1 nm/min are desired for batch process and near 10 nm/min for single-wafer processes. A mixture of 500:1 DHF (dilute HF) with dissolved oxygen controlled near parts-per-million (ppm) levels has been found to meet these requirements for post copper CMP (chemical-mechanical polishing) cleans with exposed SiO2 and Cu metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 267
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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