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The Use of Ion Channeling Axial Scans in the Study of Ion-Implanted Al2O3*

Published online by Cambridge University Press:  25 February 2011

G. C. Farlow ,
C. W. White ,
B. R. Appleton ,
P. S. Sklad  and
C. J. McHargue
G. C. Farlow
Affiliation:
ORAU Postdoctoral Fellow.
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. S. Sklad
Affiliation:
Metals and Ceramics, ORNL.
C. J. McHargue
Affiliation:
Metals and Ceramics, ORNL.
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Abstract

Rutherford backscattering and ion channeling-axial scans have been used to study lattice sites for several impurities implanted into A12O3. The case of Ga implanted in A12O3 is discussed and is shown to be substitutional on the Al sublattice. Additionally, the use of this technique in the study of precipitates in A12O3 is discussed with reference to Fe implanted A12O3 which was annealed in either oxygen or hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 295
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, . S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc. and by an appointment to the USDOE Postgraduate Research Training Program administered by Oak Ridge Associated Universitites.

References

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