Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-13T02:20:21.174Z Has data issue: false hasContentIssue false

The use of thin Film Substrates to Study Enhanced Solid-State Phase Transformations

Published online by Cambridge University Press:  21 February 2011

PAUL G. Kotula
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S.E., Minneapolis, MN 55455
Dwight D. Erickson
Affiliation:
3M Company, 3M Center, St. Paul, MN 55144
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S.E., Minneapolis, MN 55455
Get access

Abstract

A thin-film substrate geometry is described for the study of enhanced or seeded solid-state phase transformations. As an example of this approach, thin films of hematite have been used as substrates for the study of the seeded phase transformation of a boehmite-derived transition-alumina to α-A12O3. The hematite films were grown on bulk (0001) α-A12O3 single crystal substrates by pulsed-laser ablation. A layer of a boehmite sol was then spin-coated onto the thin film. The assemblages were then heated to 950°C, or 1000°C in order to induce the phase transformation. Specimens were imaged in cross section by transmission electron microscopy. No transformation was observed for specimens heated to 950°C. In specimens heated to 1000°C, the transition alumina was found to transform to alpha-alumina, starting at the surface of the hematite film, via solid-state heteroepitaxy. In this case, islands, growing out from the hematite film into the transition alumina layer, were observed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kumagai, M. and Messing, G. L., J. Am. Ceram. Soc. 67, C230–C231 (1984).Google Scholar
2. Lee, W. E. and Lagerlof, K. P. D., J. Electron Microsc. Tech. 2, 247258 (1985).Google Scholar
3. Kumagai, M. and Messing, G. L., J. Am. Ceram. Soc. 68, 500505 (1985).CrossRefGoogle Scholar
4. Messing, G. L., Kumagai, M., Shelleman, R. A. and McArdle, J. L., in Science of Ceramic Chemical Processing, edited by Hench, L. L. and Ulrich, D. R. (John Wiley & Sons, New York, 1986), p. 259271.Google Scholar
5. Yarbrough, W. A. and Roy, R., J. Mater. Res. 2, 494515 (1987).Google Scholar
6. Pach, L., Roy, R. and Komarneni, S., J. Mater. Res. 5, 278285 (1990).CrossRefGoogle Scholar
7. McArdle, J. L. and Messing, G. L., Adv. Ceram. Mater. 3, 387392 (1988).Google Scholar
8. McArdle, J. L. and Messing, G. L., J. Am. Ceram. Soc. 76, 214222 (1993).CrossRefGoogle Scholar
9. McArdle, J. L., Messing, G. L., Tietz, L. A. and Carter, C. B., J. Am. Ceram. Soc. 72, 864867 (1989).Google Scholar
10. Tietz, L. A. and Carter, C. B., J. Am. Ceram. Soc. 75, 10971102 (1992).Google Scholar
11. Tietz, L. A. and Carter, C. B., Phil. Mag. A 67, 699727 (1993).Google Scholar
12. Susnitzky, D. W. and Carter, C. B., J. Am. Ceram. Soc. 75, 24632478 (1992).Google Scholar
13. Kotula, P. G. and Carter, C. B., Mat. Res. Soc. Symp. Proc. 285, 373379 (1993).Google Scholar
14. Hirsch, P., Howie, A., Nicholson, R., Pashley, D. W. and Whelan, M. J., Electron Microscopy of Thin Crystals, Robert E. Krieger Publishing Co., Inc., Malabar, FL, (1977)Google Scholar
15. Tietz, L. A., Summerfelt, S. R. and Carter, C. B., Phil. Mag. A 65, 439460 (1992).Google Scholar