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USJ Dopant Bleaching and Device Effects in Advanced Microelectronic Plasma Enhanced Resist Strip Processing

Published online by Cambridge University Press:  01 February 2011

Frank Wirbeleit
Affiliation:
frank.wirbeleit@amd.com, Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany, +49 351 277 4527, +49 351 277 94527
Volker Grimm
Affiliation:
Volker.Grimm@amd.com, Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Christian Krüger
Affiliation:
Christian.Krueger@amd.com, Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Christoph Streck
Affiliation:
Christoph.Streck@amd.com, Advanced Micro Devices (AMD), Technology Department, Wilschdorfer Landstrasse 101, Dresden, 01109, Germany
Roger Sonnemans
Affiliation:
Roger.Sonnemans@axcelis.com, Axcelis Technologies, Inc., Beverly, MA, 01915, United States
Ivan Berry
Affiliation:
Ivan.Berry@axcelis.com, Axcelis Technologies, Inc., Beverly, MA, 01915, United States
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Abstract

The impact of low temperature plasma resist strip on doped silicon surface and microelectronic device performance is investigated using different chemical gas mixtures. In this investigation, different plasma treatments where applied on non-structured and structured silicon on insulator (SOI) wafers post ultra shallow surface implants .The main surface impacts dopant bleaching and oxide loss in conjunction with plasma enhanced re-oxidation are analyzed by time of flight secondary ion mass spectrometry (TOF-SIMS) and electrical measurements of microelectronic test devices. As the result, a long range plasma radiation induced dopant activation and deactivation is separated as the main effect from surface oxide loss and re-oxidation processes. This implies further optimization of plasma resist strip processes for device improvements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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