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UV-Optics for Excimer Laser based Crystallization Processes

Published online by Cambridge University Press:  17 March 2011

H.-J. Kahlert ,
Frank Simon  and
Berthold Burghardt
H.-J. Kahlert
Affiliation:
MicroLas Lasersystem GmbH, Robert-Bosch-Breite 10, 37079 Göttingen, Germany
Frank Simon
Affiliation:
MicroLas Lasersystem GmbH, Robert-Bosch-Breite 10, 37079 Göttingen, Germany
Berthold Burghardt
Affiliation:
MicroLas Lasersystem GmbH, Robert-Bosch-Breite 10, 37079 Göttingen, Germany
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Abstract

Laser based crystallization of thin amorphous films on glass substrates have entered into industrial applications since several years. The excimer laser based process provides a low temperature procedure to obtain polycrystalline silicon films on flat panel display substrates to fabricate thin film transistors (TFT's).

The key to this application is a uniform illumination of the. Line Beam systems provide up to 365mm long homogeneous exposure fields operated with up to 300 W average power 308nm excimer lasers. The paper covers a technical overview of Line Beam Optics layout, recent developments and results.

Further high resolution optics are described and discussed for sequential lateral solidification (SLS) (1,2,3) processes. The SLS application has demonstrated to efficiently produce directionally solidified microstructures or even grain-boundary –free regions on Si-films. Diffraction limited resolution in the range of several micrometers and high optical throughput are important parameters to this application.

General considerations are presented to describe technical limits which compromise laser beam related coherence effects, optimum uniform illumination, adequate resolution and depth of focus and optical efficiency for the practical application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D6.2.1
Copyright
Copyright © Materials Research Society 2001

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References

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