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Vacancy and oxygen behavior in carbon highly doped silicon

Published online by Cambridge University Press:  21 March 2011

Pierre Lavéant ,
Peter Werner ,
Norbert Engler  and
Ulrich Goesele
Pierre Lavéant
Affiliation:
Max Planck Institute of Microstructure Physics Weinberg 2, D-06120 Halle, Germany
Peter Werner
Affiliation:
Max Planck Institute of Microstructure Physics Weinberg 2, D-06120 Halle, Germany
Norbert Engler
Affiliation:
Max Planck Institute of Microstructure Physics Weinberg 2, D-06120 Halle, Germany
Ulrich Goesele
Affiliation:
Max Planck Institute of Microstructure Physics Weinberg 2, D-06120 Halle, Germany
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Abstract

Carbon doping of silicon has gained interest since in high concentrations, carbon can reduce oreven suppress undesirable diffusion of the base dopant boron in silicon-based bipolar transistors. This behavior can only be understood in taking into account the silicon point defects i.e. vacancies and self-interstitials. In this work, we observe the oversaturation of vacancies produced by a high carbon concentration duringannealing. Experiments with a vacancy diffusing dopant, Antimony, are shown and prove this effect: in a carbon rich sample, the antimony diffusion is enhanced about 8 times compared to samples with a much lower carbonconcentration. We also investigate the carbon co-precipitation with oxygen. The carbon precipitation, asSiC, is facilitated with a high oxygen concentration. We explain this affinity by an exchange of point defects and a volume compensation. Finally, we show the precipitation of oxygen in relation to the vacancy oversaturation at 900°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.3
Copyright
Copyright © Materials Research Society 2001

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References

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