Hostname: page-component-745bb68f8f-cphqk Total loading time: 0 Render date: 2025-01-28T13:57:56.534Z Has data issue: false hasContentIssue false
  • English
  • Français

Vacuum Ultraviolet Laser Ablation of Teflon (PTFE)

Published online by Cambridge University Press:  01 January 1992

Peter R. Herman ,
Boyi Chen  and
David J. Moore
Peter R. Herman
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
Boyi Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
David J. Moore
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S-1A4
Get access

Abstract

Vacuum-ultraviolet laser ablation of Teflon is reviewed. The 157 nm irradiation of Teflon produces clean ablation sites well suited to micromachining applications in the electronics and medical fields. At 193 nm, etching profiles are poorly defined, showing swelling characteristics commonly produced by longer wavelength lasers. Comprehensive new 193 nm ablation data are presented showing the first evidence of incubation effects for Teflon. A computer model was developed to include ablation, swelling and incubation processes. The computer results satisfactorily model the experimental data over a large fluence range of 0.6 to 13 J/cm2 with three adjustable parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 163
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kuper, S. and Stuke, M., Appl. Phys. Lett., 54, 4 (1989).Google Scholar
2. Hiraoka, H. and Lazare, S., in Conference on Lasers and Electro-Optics, 1991, Vol. 12, OSA Technical Digest Series (Optical Society of America, Washingtion DC, 1991) p. 508.Google Scholar
3. D'Couto, G.C., Babu, S.V., Egitto, F.D., and Davis, C.R., in Laser Ablation in Materials Processing: Fundamental & Applications, edited by Braren, B., Dubowski, J., and Norton, D. (Mater. Res. Soc. Proc. 285, Pittsburgh, Pa, 1992)Google Scholar
4. Herman, P.R., Chen, B., Moore, D.J., and Canaga-Retnam, M., in Photons and Low Energy Particlesin Surface Processing, edited by Ashby, C., Brannon, J.H., and Pang, S. (Mater. Res. Soc. Proc. 236, Pittsburgh, PA, 1992) pp. 53–58.Google Scholar
5. Kannari, F., Kakehata, M., and Obara, M., Rev. Laser Engineering, 19, 2 (1992).Google Scholar
6. Basting, D., Sowada, U., Vop, F., and Oesterlin, P., in Gas and Metal Vapor Lasers and Applications, edited by Kim, J.J. and Kittel, F.K. (SPIE 1412, 1991) pp. 80–83.Google Scholar
7. Srinivasan, R., Science 234, 559 (1986).Google Scholar
8. Kuper, S. and Stuke, M., Appl. Phys. B, 44, 199 (1987).Google Scholar
9. Furzikov, N.P., Appl. Phys. Lett. 56, 1638 (1990).Google Scholar
10. Philipp, H.R., Cole, H.S., Liu, Y.S., and Sitnik, T.A., Appl. Phys. Lett., 48, 192 (1986).Google Scholar
11. Sauerbrey, R. and Pettit, G.H., Appl. Phys. Lett. 55, 421 (1989).Google Scholar
12. Fukumura, H., Mibuka, N., Eura, S., and Masuhara, H., Appl. Phys. A, 53, 255 (1991).Google Scholar
13. Heszler, P., Bor, Zs., and Hajos, G., Appl. Phys. A, 49, 739 (1989).Google Scholar