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Vapor Phase Synthesis of II-IV Semiconductor Nanoparticles in a Counterflow Jet Reactor

Published online by Cambridge University Press:  10 February 2011

D. Sarigiannis ,
J.D. Peck ,
T.J. Mountziaris ,
G. Kioseoglou  and
A. Petrou
D. Sarigiannis
Affiliation:
Department of Chemical Engineering. State University of New York. Buffalo, NY 14260
J.D. Peck
Affiliation:
Department of Chemical Engineering. State University of New York. Buffalo, NY 14260
T.J. Mountziaris*
Affiliation:
Department of Chemical Engineering. State University of New York. Buffalo, NY 14260
G. Kioseoglou
Affiliation:
Department of Physics. State University of New York. Buffalo., NY 14260
A. Petrou
Affiliation:
Department of Physics. State University of New York. Buffalo., NY 14260
*
#Corresponding Author. E-mail: tjm@eng.buffalo.edu
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Abstract

The vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si watler. The precursors used in this study were vapors of (CH3)2Zn:[N(C2H5)3)]2 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM). electron diffraction. and Raman spectroscopy. The reactor was operated in a continuous, steady-state mode using a gas delivery system that is typical flor MOVPII systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 41
Copyright
Copyright © Materials Research Society 2000

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