Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-29T04:12:44.906Z Has data issue: false hasContentIssue false
  • English
  • Français

Varistor Beahavior in Lead Based Perovskite Comounds

Published online by Cambridge University Press:  17 March 2011

Seema Sharma  and
R.N.P. Choudhary
Seema Sharma
Affiliation:
Department of Physics, A.N.College, Patna- 800013, India
R.N.P. Choudhary
Affiliation:
Department of Physics, Indian Institute of Technology, Kharagpur-721302, India
Get access

Extract

Polycrystalline samples of Pb(Cd1/2W1/2)O3 and Pb(Mo1/2W1/2)O3 were synthesized by a high-temperature solid-state reaction technique. Preliminary crystal structure and microstructure of the compounds at room temperature were studied using X-ray diffraction (XRD) technique and Scanning electron microscopy (SEM), respectively. The dielectric permittivity (⊏) and losstangent (tan ⊏) of the compounds were obtained both as a function of frequency(103-104Hz) atroom temperature and temperature (30-3200C) at 10 kHz. Both the ac and dc conductivity have been studied over a wide range of temperature. The current– voltage (I-V) characteristics of the compound studied at different temperatures reveal that the Pb(Cd1/2W1/2)O3 also has excellent varistor behavior. A PTCR effect and NTCR effect was exhibited by Pb(Cd1/2W1/2)O3 and Pb(Cd1/2Mo1/2)O3 respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.9.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Negas, T., Yeager, G., Bell, S., Coats, N., Am.Ceram. Soc.Bull. 72 80 (1993).Google Scholar
2. Tamura, H., Konolle, T., Wakino, Y., Wakino, K.,J.Am.Ceram.Soc. 67 C59 (1989).Google Scholar
3. Wakino, K., Minai, K., Tamura, H.,Am.Cearm.Soc. 67 278 (1984).Google Scholar
4. Vieffland, D., Kim, N., Xu, Z., Payne, D. A., Am.Ceram.Soc. 78 2481 (1995).Google Scholar
5. Bera, S., Choudhary, R.N.P., Ferroelectrics 220 55 (1999).Google Scholar
6. Shrout, T.R., Halliyal, A., Am.Ceram Soc.Bull. 66 704 (1987).Google Scholar
7. Jaffe, B. Jr, Cook, W.R., Jaffe, H., Piezoelectric Ceramics,(Academic Press, NewYork 1979).Google Scholar
8. Tsai, J.K., Wu, T.B.,J.Appl.Phys. 76 4817 (1994).Google Scholar
9. Tsai, J.K., Wu, T.B.,Jpn. Appl. Phys. 34 6452 (1995).Google Scholar
10. Leite, E.R., Nascimento, A.M., Bueno, P. R., Longo, E., Varela, J. A., J.Mat. Sci.: Mater.Elec. 10 321 (1999).Google Scholar
11. Tuo, C.T., Chen, C.S., Lin, I.N., J.Am.Ceram.Soc. 81 2942 (1998).Google Scholar
12. Tuo, C.T., Chen, C. S., Lin, I.N., J.Am.Ceram.Soc. 81 2949 (1998).Google Scholar
13. Shimizu, Y., Lin, F.C., Takau, Y., epshira, M., J.Am.Ceram. Soc. 81 1633 (1998).Google Scholar
14. Bai, S.N., Tseng, T.Y., J.Appl.Phys. 74 695 (1993).Google Scholar
15. Clarke, D.R., J.Am.Ceram.Soc 82 485 (1999).Google Scholar
16. Bera, S., Choudhary, R.N.P., J. Mater. Sci. Lett. 15 251 (1996).Google Scholar
17. Bera, S., Choudhary, R.N.P., Mater.Lett. 37 111 (1996).Google Scholar
18. Scherrer, P., Gottin Natrichit 2 98 (1918).Google Scholar
19. Loehman, R.E., Characterization of Ceramics, (Butterworth-Heineman 1993), p.121.Google Scholar
20. Kindgery, W.D., Bowes, H.K., Uhlmann, D.R., Introduction to Ceramics, (Wily Publications, New York, 1976), p.163.Google Scholar
21. Mahan, G.D., Levinson, L.M., Philipp, H.R., J. Appl. Phys. 50 2799 (1979).Google Scholar
22. Matsuoka, T., Matsuo, Y., Sasald, H., Hayakawa, S., J.Am. Ceram. Soc. 55 108 (1972).Google Scholar
23. Cheng, H.C., Lin, T.R., Hu, C.T., Lin, I.N., J.Am.ceram. Soc. 76 827 (1993).Google Scholar
24. Heywang, W., J.Am. Ceram. Soc. 47 484 (1964).Google Scholar
25. Jonker, G.H., Solid State Electron. 7 895 (1964).Google Scholar
26. Nan, C.W., Clarke, D.K., J.Am.Ceram.Soc 79 3189 (1996).Google Scholar
27. Lee, Y.S., Tseng, T.Y., J.Am. Ceram Soc. 75 1636 (1992).Google Scholar
28. Asokan, T., Freer, R., J.Mater. Sci.Lett. 13 925 (1994).Google Scholar
29. Francis, L.T., Joseph, P.D., Clive, A., Clive, R.A., J.Am.Ceram.Soc. 81 2371 (1998).Google Scholar
30. Pike, G.E., Grain Boundaries in Semiconductors,North-Holland,NewYork (1982) p.369.Google Scholar