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Varistor Properties of (Nb,Ba)-Doped TiO2

Published online by Cambridge University Press:  15 February 2011

M. F. Yan  and
W. W. Rhodes
M. F. Yan
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
W. W. Rhodes
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974, USA
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Abstract

A new varistor based on TiO2 ceramic was developed. TiO2 ceramics with the dopant ranges of 0 < Nb < 2% and 0 < Ba < 2% were prepared and their electrical properties were measured. In these dopant ranges, several compositions were discovered to have useful varistor properties with a voltagecurrent nonlinearity index of α > 3. It was found that Ba dopant which segregates at grain boundaries and an oxidizing atmosphere during cooling are necessary to produce varistor properties in (Nb,Ba)-doped TiO2. Nb was introduced to decrease the TiO2 lattice resistivity to a range useful for device applications. Resistivity data were measured as functions of dopant composition and sintering atmospheres. Data were analyzed in terms of the defect structure in TiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 357
Copyright
Copyright © Materials Research Society 1982

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References

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