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The Velocity-Field Characteristic Of Indium Nitride

Published online by Cambridge University Press:  10 February 2011

S. K. O'Leary ,
B. E. Foutz ,
M. S. Shur ,
L. F. Eastman  and
U. V. Bhapkar
S. K. O'Leary
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
B. E. Foutz
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180–3590
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, New York 14853
U. V. Bhapkar
Affiliation:
Naval Surface Warfare Center, Code T44, Building 1470, Dahlgren, Virginia 22448
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Abstract

We determine the velocity-field characteristic of wurtzite indium nitride using an ensemble Monte Carlo approach. It is found that indium nitride exhibits an extremely high room temperature peak drift velocity, 4.2 × 107 cm/s, at a doping concentration of 1 × 1017 cm−3. This exceeds that of gallium nitride, 2.9 × 107 cm/s, by approximately 40 %. For our nominal parameter selections, the saturation drift velocity of indium nitride is found to be 1.8 × 107 cm/s. The device performance of this material, as characterized by the cut-off frequency, is found to superior to that of gallium nitride, gallium arsenide, and silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 845
Copyright
Copyright © Materials Research Society 1998

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