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Vertically Aligned Carbon Nanotubes Formed Using dc PECVD as Switching Elements for Extreme Environment Space Electronics

Published online by Cambridge University Press:  01 February 2011

Anupama B Kaul ,
Robert Kowalczyk ,
Krikor Megerian ,
Paul von Allmen  and
Richard L Baron
Anupama B Kaul
Affiliation:
anu.kaul@jpl.nasa.gov, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, United States, 818-393-7186
Robert Kowalczyk
Affiliation:
robert.kowalczyk@jpl.nasa.gov, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, United States
Krikor Megerian
Affiliation:
krikor.megerian@jpl.nasa.gov, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, United States
Paul von Allmen
Affiliation:
pva@mail.jpl.nasa.gov, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, United States
Richard L Baron
Affiliation:
richard.baron@jpl.nasa.gov, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, CA, 91109-8099, United States
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Abstract

Vertically aligned carbon nanotube (CNT) nano-electro-mechanical (NEM) switches are currently being investigated for their application in radiation-hard, high temperature space electronics. Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT. Our NEM structure consists of CNTs that are grown using dc plasma-enhanced (PE) chemical-vapor-deposition (CVD) for forming vertically aligned, rigid tubes. A gas mixture of acetylene and ammonia were used for tube growth at a total pressure of a few Torr and temperatures up to 700 °C. We have formed arrays of single, vertically aligned tubes directly on Si, which was enabled by this first report of an optical lithography approach used to generate isolated tubes compared to e-beam lithography that is conventionally used. Vertical NEM switch devices were formed where single, vertically aligned tubes were seen within deep trenches, in close proximity to conducting electrodes.

Keywords

nanoscaleelectrical propertiesC
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1081: Symposium P – Carbon Nanotubes and Related Low-Dimensional Materials , 2008 , 1081-P15-06
Copyright
Copyright © Materials Research Society 2008

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