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Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Z. C. Huang ,
Bing Yang ,
H. K. Chen  and
J. C. Chen
Z. C. Huang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
Bing Yang
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
H. K. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
J. C. Chen
Affiliation:
Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228
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Abstract

We have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 195
Copyright
Copyright © Materials Research Society 1995

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