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Voids in Hydrogenated Amorphous Silicon: A Comparison of ab initio Simulations and Proton NMR Studies

Published online by Cambridge University Press:  01 February 2011

Sudeshna Chakraborty ,
David C Bobela ,
P C Taylor  and
D. A. Drabold
Sudeshna Chakraborty
Affiliation:
chakraborty.sudeshna@gmail.com, University of Utah, Department of Physics, Salt Lake City, UT, 84112, United States
David C Bobela
Affiliation:
dbobela@gmail.com, Ohio University, Dept of Physics and Astronomy, 251 C clippinger Lab, Athens, OH, 45701, United States
P C Taylor
Affiliation:
Colorado School of Mines, Department of Physics, Golden, CO, 80401, United States
D. A. Drabold
Affiliation:
Ohio University, Department of Physics and Astronomy, Athens, OH, 45701, United States
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Abstract

Recently, a new hydrogen NMR signal has been observed in a number of PECVD prepared hydrogenated amorphous silicon (a-Si:H) films of varying quality. It is speculated that the signal is the consequence of a dipolar-coupled hydrogen pair separated, on average, by 1.8 ± 0.1 Å. To elucidate the possible bonding configurations responsible for the NMR data of ref. [1], we have used ab initio simulation methods to determine a set of relaxed structures of a-Si:H with varying void sizes and H-concentrations. Models containing two isolated hydrogen atoms indicate a preferred H-H distance of approximately 1.8 Å when the two atoms bond to nearest neighbor silicon atoms. This separation also occurs for models containing small, hydrogenated voids, but the configurations giving rise to this H-H distance do not appear to be unique. For larger voids, a proton separation of about 2.4Å is seen, as noted previously [2]. There appears to be consistency between the computed structures and the NMR data for configurations consisting of isolated hydrogen pairs or for clusters of an even number of hydrogen atoms with the constraint that the average H-H distance is 1.8 Å. In this paper, we will discuss the most probable bonding configurations of clustered hydrogen based upon the extent of the NMR data and simulated structures.

Keywords

amorphousbondingnuclear magnetic resonance (NMR)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A11-02
Copyright
Copyright © Materials Research Society 2008

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References

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