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Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

Published online by Cambridge University Press:  20 December 2012

Jian-Wei Ho ,
Qixun Wee ,
Jarrett Dumond ,
Li Zhang ,
Keyan Zang ,
Wee Kiong Choi ,
Andrew A. O. Tay  and
Soo-Jin Chua
Jian-Wei Ho
Affiliation:
NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore. Department of Electrical & Computer Engineering, National University of Singapore, Singapore.
Qixun Wee
Affiliation:
Singapore-MIT Alliance, National University of Singapore, Singapore. Department of Electrical & Computer Engineering, National University of Singapore, Singapore.
Jarrett Dumond
Affiliation:
Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore.
Li Zhang
Affiliation:
NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore. Department of Electrical & Computer Engineering, National University of Singapore, Singapore.
Keyan Zang
Affiliation:
Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Singapore.
Wee Kiong Choi
Affiliation:
Singapore-MIT Alliance, National University of Singapore, Singapore. Department of Electrical & Computer Engineering, National University of Singapore, Singapore.
Andrew A. O. Tay
Affiliation:
Department of Mechanical Engineering, National University of Singapore, Singapore.
Soo-Jin Chua
Affiliation:
Department of Electrical & Computer Engineering, National University of Singapore, Singapore. Singapore-MIT Alliance for Research and Technology Centre, National University of Singapore, Singapore.
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Abstract

A combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Keywords

Sinanostructurescanning electron microscopy (SEM)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1512: Symposium FF – Semiconductor Nanowires—Optical and Electronic Characterization and Applications , 2013 , mrsf12-1512-ff08-02
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Goldberger, J., Hochbaum, A. I., Fan, R., and Yang, P., “Silicon Vertically Integrated Nanowire Field Effect Transistors,” Nano Letters, vol. 6, pp. 973–977, 2006/05/01 2006.CrossRefGoogle Scholar
Garnett, E. and Yang, P., “Light Trapping in Silicon Nanowire Solar Cells,” Nano Letters, vol. 10, pp. 1082–1087, 2010/03/10 2010.CrossRefGoogle ScholarPubMed
Pan, C., Luo, Z., Xu, C., Luo, J., Liang, R., Zhu, G., et al. ., “Wafer-Scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si1–xGex Wires: Fabrication, Characterization, and Photovoltaic Application,” ACS Nano, vol. 5, pp. 6629–6636, 2011/08/23 2011.CrossRefGoogle Scholar
Zhang, A., Kim, H., Cheng, J., and Lo, Y.-H., “Ultrahigh Responsivity Visible and Infrared Detection Using Silicon Nanowire Phototransistors,” Nano Letters, vol. 10, pp. 2117–2120, 2010/06/09 2010.CrossRefGoogle ScholarPubMed
Patolsky, F., Zheng, G., and Lieber, C. M., “Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species,” Nat.Protocols, vol. 1, pp. 1711–1724, 2006.CrossRefGoogle ScholarPubMed
Boukai, A. I., Bunimovich, Y., Tahir-Kheli, J., Yu, J.-K., Goddard Iii, W. A., and Heath, J. R., “Silicon nanowires as efficient thermoelectric materials,” Nature, vol. 451, pp.168–171, 2008.CrossRefGoogle ScholarPubMed
Huang, Z., Geyer, N., Werner, P., de Boor, J., and Gosele, U., “Metal-assisted chemical etching of silicon: a review,” Advanced materials, vol. 23, pp. 285–308, Jan 11 2011.CrossRefGoogle ScholarPubMed
Huang, J., Chiam, S. Y., Tan, H. H., Wang, S., and Chim, W. K., “Fabrication of Silicon Nanowires with Precise Diameter Control Using Metal Nanodot Arrays as a Hard Mask Blocking Material in Chemical Etching,” Chemistry of Materials, vol. 22, pp. 4111–4116, 2010.CrossRefGoogle Scholar
Peng, K., Zhang, M., Lu, A., Wong, N.-B., Zhang, R., and Lee, S.-T., “Ordered silicon nanowire arrays via nanosphere lithography and metal-induced etching,” Applied Physics Letters, vol. 90, p. 163123, 2007.CrossRefGoogle Scholar
Huang, Z., Fang, H., and Zhu, J., “Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density,” Advanced materials, vol. 19, pp. 744–748, 2007.CrossRefGoogle Scholar
Choi, W. K., Liew, T. H., Dawood, M. K., Smith, H. I., Thompson, C. V., and Hong, M. H., “Synthesis of Silicon Nanowires and Nanofin Arrays Using Interference Lithography and Catalytic Etching,” Nano Letters, vol. 8, pp. 3799–3802, 2008/11/12 2008.CrossRefGoogle ScholarPubMed
Johannes de, B., Nadine, G., Jörg, V. W., Ulrich, G., and Volker, S., “Sub-100 nm silicon nanowires by laser interference lithography and metal-assisted etching,” Nanotechnology, vol. 21, p. 095302, 2010.Google Scholar