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Wedge Tem Characterization of Movpe GaInAs/InP Layers, Concentration Grading at Interfaces

Published online by Cambridge University Press:  28 February 2011

R. Spycher ,
P.A. Stadelmann  and
P.A. Buffat
R. Spycher
Affiliation:
Institut de Microscopie Electronique, Ecole Polytechnique Fédérale, CH-1015 LAUSANNE, Switzerland
P.A. Stadelmann
Affiliation:
Institut de Microscopie Electronique, Ecole Polytechnique Fédérale, CH-1015 LAUSANNE, Switzerland
P.A. Buffat
Affiliation:
Institut de Microscopie Electronique, Ecole Polytechnique Fédérale, CH-1015 LAUSANNE, Switzerland
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Abstract

Wedge Transmission Electron Microscopy has many advantages, one of which is the concentration determination in III-V semiconductors with a fairly good accuracy. This allows us to determine the concentration variation during the growth of GaInAs/InP multilayered structures and to deduce the concentration grading at the interface GaInAs/InP (As in InP) and the abruptness of the InP/GaInAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 135
Copyright
Copyright © Materials Research Society 1990

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References

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