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Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

Published online by Cambridge University Press:  31 January 2011

Jae-Kwan Kim ,
Jun Young Kim ,
Seung-Cheol Han ,
Joon Seop Kwak  and
Ji-Myon Lee
Jae-Kwan Kim
Affiliation:
kimjk@sunchon.ac.kr, Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Jun Young Kim
Affiliation:
zr1003@sunchon.ac.k, Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Seung-Cheol Han
Affiliation:
lunasea2k@nate.com, Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Joon Seop Kwak
Affiliation:
jskwak@sunchon.ac.kr, Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Ji-Myon Lee
Affiliation:
jimlee@sunchon.ac.kr, Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Korea, Republic of
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Abstract

The etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Keywords

II-VIoxidedielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-25
Copyright
Copyright © Materials Research Society 2010

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