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What does an (a+c) dislocation core look like in wurtzite GaN ?

Published online by Cambridge University Press:  01 February 2011

Imad Belabbas ,
Gerard Nouet ,
A. Béré ,
J. Chen ,
S. Petit ,
M.A. Belkhir ,
P. Ruterana  and
Ph. Komninou
Imad Belabbas
Affiliation:
gerard.nouet@ensicaen.fr, ENSICAEN, SIFCOM, ENSICAEN/SIFCOM, 6 boulevard du marechal juin, Caen, Caen, N/A, 14050, France, 33.(0)2.31.45.25.54, 33.(0)2.31.45.26.60
Gerard Nouet
Affiliation:
gerard.nouet@ensicaen.fr, ENSICAEN, SIFCOM, France
A. Béré
Affiliation:
Laboratoire Structure des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, Ecole Nationale Supérieure d‘Ingénieurs de Caen, 6 Bld du Maréchal Juin, 14050 Caen cedex, France
J. Chen
Affiliation:
Laboratoire de Physique et de Chimie de l’Environnement, Université de Ouagadougou, 03 BP: 7021 Ouagadougou 03, Burkina Faso
S. Petit
Affiliation:
Laboratoire de Recherche sur les Propriétés des Matériaux Nouveaux, Institut Universitaire de Technologie d'Alençon, 61250 Damigny, France
M.A. Belkhir
Affiliation:
Laboratoire Structure des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, Ecole Nationale Supérieure d‘Ingénieurs de Caen, 6 Bld du Maréchal Juin, 14050 Caen cedex, France
P. Ruterana
Affiliation:
Groupe de Physique du Solide, Laboratoire de Physique Théorique, Université A.Mira, Béjaia, Algérie
Ph. Komninou
Affiliation:
Laboratoire Structure des Interfaces et Fonctionnalité des Couches Minces, UMR CNRS 6176, Ecole Nationale Supérieure d‘Ingénieurs de Caen, 6 Bld du Maréchal Juin, 14050 Caen cedex, France
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Abstract

Here we present results on the first atomic simulation of the threading (a+c)-mixed dislocation cores in wurtzite GaN. These calculations are based on a modified Stillinger-Weber potential. For this dislocation two core configurations are shown to be stable, one with a complex double 5/6-atoms rings and the other a with 5/7-atom rings structures. The two cores contain neither wrong nor dangling bonds.

Keywords

dislocationsIII-Vsimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF26-10
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Orton, J.W. and Foxton, C.T., Rep. Prog. Phys. 61, 1 (1998).CrossRefGoogle Scholar
2. Morkoç, H., Cingoıani, R., Lambrecht, W., Gil, B., Jiang, H. X., Lin, J., Pavlidis, D. and Shenai, K., MRS Internet J. Nitride Semicond. Res. 4S1, G1.2 (1999).Google Scholar
3. Strite, S., Lin, M.E., Morkoç, H., Thin Solid Films 231, 197 (1992).CrossRefGoogle Scholar
4. Jain, S.C., Willander, M., Narayan, J. and Van Overstraeten, R., J. Appl. Phys. 87, 965 (2000).CrossRefGoogle Scholar
5. Ponce, F.A., Cherns, D., Young, W.T. and Steeds, J.W., Appl. Phys. Lett. 69, 770 (1996).Google Scholar
6. Gibart, P., Beaumont, B. and Vennegues, P., “in Nitride Semiconductors, Handbook on Materials and Devices”, edited by Ruterana, P., Albrecht, M. and Neugebauer, J. (WILEY-VCH GmbH & Co. 2003) p 45.Google Scholar
7. Qian, W., Rohrer, G.S., Skowrnonski, M., Doverspike, K., Rowland, L. B. and Gaskill, D. K, Appl. Phys. Lett. 67, 2284 (1995).CrossRefGoogle Scholar
8. Hsu, J.W.P., Manfra, M.J., Chu, S.N.G., Chen, C.H., Pfeiffer, L.N. and Molnar, R.J., Appl. Phys. Lett., 78, 3980 (2001).CrossRefGoogle Scholar
9. Xin, Y., Pennycoock, S. J., Browning, N. D., Nelist, P. D., Sivananthan, S., Omnès, F., Beaumont, B., Faurie, J. P. and Gibart, P., Appl. Phys. Lett., 72, 2680 (1998).CrossRefGoogle Scholar
10. Blumenau, A.T.., Fall, C.J., Elsner, J., Jones, R., Heggie, M.I. and Frauenheim, Th., Phys. Stat. Sol. (c), 0, 1684 (2003).CrossRefGoogle Scholar
11. Ruterana, P., Potin, V., Nouet, G., Bonnet, R. and Loubradou, M., Mater. Sci. Eng. B59, 177 (1999)CrossRefGoogle Scholar
12. Arslan, I., Bleloch, A., Stach, E.A. and Browning, N.D., Phys. Rev. Lett., 94, 025504 (2005).CrossRefGoogle Scholar
13. Finnis, M., 2003, in “Forces in Condensed Matter”, (Oxford University Press, Oxford).Google Scholar
14. Béré, A., and Serra, A., Phys. Rev. B 65, 205323 (2002).CrossRefGoogle Scholar
15. Northrup, J.E., Negebauer, J. and Romano, L.T. Phys. Rev. Lett. 77, 103 (1996).CrossRefGoogle Scholar
16. Chen, J., Ruterana, P., and Nouet, G., Phys. Rev. B, 67, 205210 (2003).CrossRefGoogle Scholar
17. Hirth, J.P. and Lothe, J., “Theory of dislocations” (Wiley, New York, 1982).Google Scholar
18. de Wit, R., J. Res. Natl. Bur. Stand. U. S. 77A, 608 (1973).Google Scholar
19. Verlet, L., Phys. Rev. 159, 98 (1967).Google Scholar
20. Béré, A., Chen, J., Ruterana, P., Serra, A. and Nouet, G., Comput. Mater. Sci., 24, 144 (2002).CrossRefGoogle Scholar
21. Chen, J., Ruterana, P. and Nouet, G., Mater. Sci. Eng, B 82, 117 (2001).CrossRefGoogle Scholar
22. Wang, D., Ichikawa, M. and Yoshida, S., Philos. Mag. Lett. 82, 119 (2002).CrossRefGoogle Scholar