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Which states contribute to the tunneling current for large barrier thicknesses?

Published online by Cambridge University Press:  01 February 2011

Christian Heiliger ,
Peter Zahn  and
Ingrid Mertig
Christian Heiliger
Affiliation:
c.heiliger@physik.uni-halle.de, Martin Luther University, Department of Physics, Von-Seckendorff-Platz 1, D-06120 Halle, Halle, N/A, N/A, Germany
Peter Zahn
Affiliation:
peter.zahn@physik.uni-halle.de, Martin Luther University, Department of Physics, D-06099 Halle, N/A, N/A, Germany
Ingrid Mertig
Affiliation:
ingrid.mertig@physik.uni-halle.de, Martin Luther University, Department of Physics, D-06099 Halle, N/A, N/A, Germany
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Abstract

The transport properties of planar Fe/MgO/Fe tunnel junctions are investigated theoretically by means of ab initio calculations. In particular, the k||-resolved conductance in dependence on the barrier thickness, the interface structure, and the magnetic configuration is studied. The results show that the number of states in the k||-space contributing significantly to the overall current is decreasing with increasing barrier thickness as expected. In contrast to simple parabolic band models the contribution of states in the vicinity of k||=0, however, is only involved for a few considered configurations of the system Fe/MgO/Fe.

Keywords

magnetoresistance (transport)crystallinemagnetic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 941: Symposium Q – Magnetic Thin Films, Heterostructures, and Device Materials , 2006 , 0941-Q03-05
Copyright
Copyright © Materials Research Society 2006

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