Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-28T10:11:19.983Z Has data issue: false hasContentIssue false
  • English
  • Français

Wide Bandgap Semiconductor Power Devices

Published online by Cambridge University Press:  10 February 2011

T. P. Chow ,
N. Ramungul  and
M. Ghezzo
T. P. Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180–3590, chow@unix.cie.rpi.edu
N. Ramungul
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180–3590, chow@unix.cie.rpi.edu
M. Ghezzo
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301, ghezzo@crdgw2.crd.ge.com
Get access

Abstract

The present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 89
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shenai, K., Scott, R.S., and Baliga., B.J., IEEE Trans. Electron Devices 36, 1811 (1989).Google Scholar
2. Baliga, B.J., IEEE Electron Device Lett. 10,455 (1989).Google Scholar
3. Chow, T.P. and Tyagi, R., IEEE Trans. Electron Devices 41, 1481 (1994).Google Scholar
4. Bhalla, A. and Chow, T.P., Paper 6.13, Proc. 6th International Symp. Power Semiconductor Devices and ICs, pp.287–292, May 31-Jun 2 (1994).Google Scholar
5. Baliga, B.J., Physics of Semiconductor Power Devices (JWS Publishing, 1996).Google Scholar
6. Palmour, J.W., Proc. 9th International Symp. Power Semiconductor Devices and ICs, 25, 1997 (unpublished).Google Scholar
7. Ramungul, N., Tyagi, R., Bhalla, A., Chow, T.P., Ghezzo, M., Kretchmer, J., and Hennessy, W., Int'l Conf. on SiC and Related Materials - ICSRCM-95, Tech. Dig., 322, 1995 (unpublished).Google Scholar
8. Ramungul, N., Chow, T.P., Ghezzo, M., Kretchmer, J., and Hennessy, W., Device Research Conference, Paper III.A-3, pp.56–58, 1996 (unpublished).Google Scholar
9. Casady, J.B., Agarwal, A., Rowland, L.B., Valek, W.F., and Brandt, C.D., Device Research Conference, Paper II.B-1, 32, 1997 (unpublished).Google Scholar
10. Hara, K., Int'l Conf. on Silicon Carbide, ILL-nitrides and Related Materials – ICSCIIIN-97, Abstracts, 154, 1997 (unpublished)Google Scholar
11. Shenoy, J., Cooper, J.A. Jr.,, and Melloch, M.R., Electron Device Letters, 18, 93 (1997).Google Scholar
12. Stephani, D., to be published in Special Issue of Diamond and Related Materials – Proc. of European Conf. on SiC and Related Materials, 1997.Google Scholar
13. Rymazewski, E.J., Materials Research Society Fall Meeting, 1996.Google Scholar
14. Chow, T.P. and Ramungul, N., to be patented.Google Scholar
15. Tanaka, T., Yasuda, Y., and Ohayashi, M., IEEE Trans. Electron Devices, ED–33, 2041 (1986).Google Scholar
16. Kyuregyan, A.S. and Yurkov, S.N., Sov. Phys. Semicond., 23(1), 1126 (1989).Google Scholar
17. Konstantinov, A., et.al., Appl. Phys. Lett., 71, 90–92, (1997)10.1063/1.119478Google Scholar
18. Kolnik, J., Oguzman, I.H., Brennan, K.F., Wang, R., and Ruden, P.P., Mat. Res. Soc. Symp. Proc. 423, 45 (1996).Google Scholar
19. Neudeck, P. and Larkin, D.J., Device Research Conference, Late News Paper III.B-5, 1996 (unpublished).Google Scholar
20. Dmitriev, V.A., et.al., Appl. Phys. Lett., 68(2), 229 (1996).Google Scholar
21. Iwamuro, N., Okamoto, A.. Tagami, S., and Motoyama, H., IEEE Trans. Electron Devices, ED–38, 303 (1991).Google Scholar
22. Wu, Y.-F., et.al., IEEE 54th Annual Device Research Conference, 60 (1996).Google Scholar
23. Fan, Z., et.al., IEEE 54th Annual Device Research Conference, Late news paper IIIA-7 (1996).Google Scholar
24. Palmour, J., et al. (unpublished).Google Scholar
25. Kimoto, T., Wahab, Q., Ellison, A., Forsberg, U., Tuominen, M., Henry, A., and Janzen, E., 138, 1997 (unpublished).Google Scholar
26. Schoen, K.J., Ph.D. Thesis, Purdue University, May, 1997.Google Scholar
27. Patel, R., et al. (unpublished).Google Scholar
28. Patel, R., et al., Proc. 10th International Symposium on Power Semiconductor Devices and ICs, 1998 (unpublished).Google Scholar
29. See, for example, Evstropov, V.V., et.al., Sov. Phys. Semicond. 18(10), 1156 (1984).Google Scholar
30. Sugawara, Y. and Asano, K., Proc. 10th International Symposium on Power Semiconductor Devices and ICs, 1998 (unpublished).Google Scholar
31. Chow, T.P., et al. (unpublished).Google Scholar
32. Palmour, J., et al., Device Research Conference, 1996 (unpublished).Google Scholar
33. Agarwal, A.K., Cassady, J.B., Rowland, L.B., Seshadri, S., Siegiej, R.R., Valek, W.F., and Brandt, C.D., IEEE Electron Device Letters, 18, 518 (1997).Google Scholar
34. Siergiej, R.R., et al., Int'l Symp. Comp. Semicond., San Diego, CA, Sept., 1997 (unpublished).Google Scholar
35. Neudeck, P. and Larkin, D. (unpublished).Google Scholar
36. Lipkin, L., et. al., Trans. Third High Temp. Electronics Conf. (Hi-Tec 1996), XI-17, 1996 (unpublished).Google Scholar
37. Sridevan, S. and Baliga, B.J., Int'l Conf. on Silicon Carbide, III-nitrides and Related Materials – ICSCIIIN-97, Abstracts, 160, 1997 (unpublished).Google Scholar
38. Rao, M.V., et al., Int'l Conf. on Silicon Carbide, III-nitrides and Related Materials – ICSCIIIN-97, Abstracts, 73, 1997 (unpublished).Google Scholar
39. Itoh, H., Troffer, T., and Pensl, G., Int'l Conf. on Silicon Carbide, III-nitrides and Related Materials–ICSCIIIN-97, Abstracts, 607, 1997 (unpublished).Google Scholar