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Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures

Published online by Cambridge University Press:  25 February 2011

S. Miyazaki ,
H. Shin ,
K. Okamoto  and
M. Hirose
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
H. Shin
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
K. Okamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

Polysilane thin films have been grown by the rf glow discharge decomposition of SiH4 at substrate temperatures ranging from -84 to -110°C. The infrared absorption spectra have shown that polysilane chains (SiH2)n are predominantly incorporated in the matrix together with SiH3 which terminates the chain. Also, the infrared absorption band at 2120∼2140 cm-1 and a distinct Raman peak at ∼430 cm-1indicates that fairly long chains (SiH2)n with n>11 are produced. Polysilane prepared at -110°C has an optical bandgap of about 3.1 eV and exhibits a visible luminescence around 2.75 eV at 100 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 681
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Furukawa, S. and Matsumoto, N., Phys. Rev. B, 31, 2114 (1985).Google Scholar
[2] Wolford, D. J., Reimer, J. A. and Scott, B. A., Appl. Phys. Lett. 42, 369 (1983).Google Scholar
[3] Shin, H., Miyazaki, S., Ichihashi, H. and Hirose, M., Proc, of the Intern. Seminar on Reactive Plasmas, edited by Goto, T. (Organizing Committee of the Intern. Seminar on Reactive Plasmas, Nagoya, 1991), p. 201.Google Scholar
[4] Miyazaki, S., Kiriki, Y., Inoue, Y. and Hirose, M., Jpn. J. Appl. Phys. 30, 1539 (1991).Google Scholar
[5] Pollard, W. B. and Lucovsky, G., Phys. Rev. B, 26, 3172 (1982).Google Scholar
[6] Fang, C. J., Gruntz, K. J., Ley, L. and Cardona, M., J. Non-Cryst. Solids 35&36, 255 (1980).Google Scholar
[7] Takeda, K., Matsumoto, M. and Fukuchi, M., Phys. Rev. B, 30, 5871 (1984).Google Scholar
[8] Furukawa, S. and Matsumoto, N., Phys. Rev. B, 31, 2114 (1985).Google Scholar
[9] Vora, P., Solin, S. A. and John, P., Phys. Rev. B, 29, 3423 (1984).Google Scholar
[10] Matsumoto, N., Furukawa, S. and Takada, K., Solid State Commun. 53, 881 (1985).Google Scholar
[11] Lucovsky, G., Solid State commun. 29, 571 (1979).CrossRefGoogle Scholar