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W/Pt and Ti/Pt Based Contacts to Algaas/Gaas Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  25 February 2011

T.S. Kalkur  and
P.D. Wright
T.S. Kalkur
Affiliation:
Microelectronics Research Laboratories University of Colorado at Colorado Springs Colorado Springs, CO 80933-7150
P.D. Wright
Affiliation:
Microelectronics Research Laboratories University of Colorado at Colorado Springs Colorado Springs, CO 80933-7150 Martin Kestrel Company Inc., Colorado Springs.
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Abstract

Ti/Pt and W/pt was used form contacts on hevily doped InAs and InGaAs emitter layers of heterojunction Bipolar transistors (HBTs) . The as deposited contacts were ohmic for Ti/Pt on InAs and W/Pt on InGaAs. The rapid thermal annealing was performed in the temperature range of 300-600 C. The contact characteristics of Ti/Pt and W/Pt were compared with Au/Cr contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 281
Copyright
Copyright © Materials Research Society 1994

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References

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