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Wrap around field plate technique for GaN Schottky barrier diodes

Published online by Cambridge University Press:  19 December 2014

Sowmya Kolli ,
Robert Hickman  and
Bruce W Alphenaar
Sowmya Kolli
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292
Robert Hickman
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292 APIQ Semiconductor LLC, Louisville, KY 40217-7719
Bruce W Alphenaar
Affiliation:
Department of Electrical and Computer Engineering, University of Louisville, Louisville, KY 40292
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Abstract

In this paper, we propose a wrap around field termination technique for a vertical Schottky barrier diode fabricated on a free standing GaN substrate. Unlike conventional field plate designs, in the wrap around structure the field plate surrounds the active device area. This allows for better control of the electric field distribution, and reduces field-crowding. 2D finite element simulations using ATLAS show a uniform field distribution across the device. Calculations show that the Ron increases relative to the conventional field plate. A break down voltage of 1300V was predicted for a 5um thick epilayer.

Keywords

III-Vdevicessimulation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t02-07
Copyright
Copyright © Materials Research Society 2014 

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References

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