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X-Ray Diffraction and Sims Studies of Mbe Grown Doping Superlattices in Silicon

Published online by Cambridge University Press:  26 February 2011

G T Brown ,
S J Barnett ,
G W Blackmore ,
S J Courtney  and
D C Houghton
G T Brown
Affiliation:
Royal Signals and Radar Establishment. St Andrews Road, Malvern, Worcs WR14 3PS, UK
S J Barnett
Affiliation:
Royal Signals and Radar Establishment. St Andrews Road, Malvern, Worcs WR14 3PS, UK
G W Blackmore
Affiliation:
Royal Signals and Radar Establishment. St Andrews Road, Malvern, Worcs WR14 3PS, UK
S J Courtney
Affiliation:
National Research Council, Ottawa, Ontario, Canada KIA 0R6
D C Houghton
Affiliation:
National Research Council, Ottawa, Ontario, Canada KIA 0R6
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Abstract

Si-Si(B) doping superlattices (pipi structures) were grown by MBE and studied using double crystal x-ray diffraction and SIMS. Detailed analysis of the complex x-ray rocking curves required comparison of experimental data with theoretically simulated data. It is demonstrated that this technique is sensitive to irregularities in the dopant composition, dopant distribution and superlattice period. The B concentration profile is shown to spread well into the intrinsic layers and the extent and magnitude of the dopant distribution has been quantified. A comparison of this data with SIMS showed good agreement for the distribution of B and reasonable agreement for the peak values of B concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 289
Copyright
Copyright © Materials Research Society 1988

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References

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