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X-Ray Double-Crystal Diffraction Studies of Si+ Implantation in Si GaAs

Published online by Cambridge University Press:  22 February 2011

Guanqun Xia ,
Jingyi Chen ,
Nanchang Zhu  and
Suying Hu
Guanqun Xia
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Jingyi Chen
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Nanchang Zhu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Suying Hu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

The characteristics of Si+ implanted into SI GaAs and its annealing behavior have been studied by x-ray double-crystal diffraction method. Results show that there is much information on strain contained in the rocking curves. When implanting at low doses, most of the implanted Si+ is in interstitial positions in the GaAs, and this produces tensile strain. After annealing, most of the implanted Si+ can be activated and the strain can be relieved. But when implanting at large doses, the strain can not be completely relieved even after annealing at high temperature

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 131
Copyright
Copyright © Materials Research Society 1991

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References

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