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X-ray Excited Optical Luminescence Studies of InGaN and Rare-Earth Doped GaN Epilayers

Published online by Cambridge University Press:  01 February 2011

V. Katchkanov ,
J.F.W. Mosselmans ,
K.P. O'Donnell ,
N.R.J. Poolton  and
S. Hernandez
V. Katchkanov
Affiliation:
Department of Physics, Strathclyde University, John Anderson Building Glasgow, U.K. Synchrotron Radiation Department, CCLRC Daresbury Laboratory, Warrington, U.K.
J.F.W. Mosselmans
Affiliation:
Synchrotron Radiation Department, CCLRC Daresbury Laboratory, Warrington, U.K.
K.P. O'Donnell
Affiliation:
Department of Physics, Strathclyde University, John Anderson Building Glasgow, U.K.
N.R.J. Poolton
Affiliation:
Synchrotron Radiation Department, CCLRC Daresbury Laboratory, Warrington, U.K.
S. Hernandez
Affiliation:
Department of Physics, Strathclyde University, John Anderson Building Glasgow, U.K.
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Abstract

A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known “yellow” emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the “yellow” band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for “yellow” emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.31
Copyright
Copyright © Materials Research Society 2005

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References

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