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X-Ray Scattering and Absorption Studies of MnAs Thin Films Grown by MBE on GaAs (001) Substrates

Published online by Cambridge University Press:  21 February 2011

S. Huang ,
Z. H. Ming ,
Y. L. Soo ,
Y H. Kao ,
M. Tanaka  and
H. Munekata
S. Huang
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, New York 14260
Z. H. Ming
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, New York 14260
Y. L. Soo
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, New York 14260
Y H. Kao
Affiliation:
Department of Physics, SUNY at Buffalo, Amherst, New York 14260
M. Tanaka
Affiliation:
PRESTO, Japan Research and Development Corporation, and Department of Electronic Engineering, University of Tokyo, Tokyo, Japan
H. Munekata
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Japan
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Abstract

MnAs thin films grown on GaAs (001) substrates by molecular beam epitaxy have been studied by grazing incidence x-ray scattering (GIXS), x-ray diffraction (XRD) and extended x-ray absorption fine structure (EXAFS). Microstructures in films prepared with different first-layer growth conditions (template effects) are compared in terms of the interfacial roughness, lattice constants, epilayer thickness, local environment surrounding the Mn atoms, coordination number, and local disorder. The template effects are found to cause significant differences in the local structures and crystallinity of MnAs epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 29
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Tanaka, M., Harbison, J.P., Park, M.C., Park, Y.S., Shin, T., and Rothberg, G.M., Appl. Phys. Lett. 65, 1964 (1994).Google Scholar
2 Tanaka, M., Harbison, J.P., Sands, T., Cheeks, T.L., Keramidas, V.G.,J. Vac. Sci. Technol. B 12, 1091 (1994).Google Scholar
3 Kamiya, I., Aspnes, D.E., Florez, L.T., and Harbison, J.P., Phys. Rev. B 46, 15894 (1992).Google Scholar
4 Ming, Z H., Krol, A., Soo, Y.L., Kao, Y.H., Park, J S., and Wang, K.L., Phys. Rev. B 47, 16373 (1993).Google Scholar
5 Soo, Y.L., Ming, Z.H., Huang, S.W., Kao, Y.H., Bhargava, R.N., and Gallagher, D., Phys. Rev. 50, 7602 (1994).Google Scholar
6 Sinha, S.K., Sirota, E.B., Garott, S., and Stanley, H.B., Phys. Rev. B 38, 2297 (1988). S.K.Sinha, Physica, B 173, 25 (1991).Google Scholar
7 Rehr, J.J, Mustre de Leon, J., Zabinsky, S.I., and Albers, R.C., J. Am. Chem. Soc. 113, 5135 (1991).Google Scholar