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X-ray Topography Studies of Relaxation during the Homo-Epitaxy of 4H-SiC

Published online by Cambridge University Press:  06 February 2015

H. Wang ,
M. Dudley ,
J. Zhang ,
B. Thomas ,
G. Chung ,
E. K. Sanchez ,
D. Hansen  and
S. G. Mueller
H. Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
J. Zhang
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
B. Thomas
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
G. Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
E. K. Sanchez
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
D. Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
S. G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
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Abstract

A review is presented of Synchrotron X-ray Topography and KOH etching studies carried out on n type 4H-SiC offcut substrates before and after homo-epitaxial growth to study defect replication and strain relaxation processes and identify the nucleation sources of both interfacial dislocations (IDs) and half-loop arrays (HLAs) which are known to have a deleterious effect on device performance. We show that these types of defects can nucleate during epilayer growth from: (1) short segments of edge oriented basal plane dislocations (BPDs) in the substrate which are drawn by glide into the epilayer; and (2) segments of half loops of BPD that are attached to the substrate surface prior to growth which also glide into the epilayer. It is shown that the initial motion of the short edge oriented BPD segments that are drawn from the substrate into the epilayer is caused by thermal stress resulting from radial temperature gradients experienced by the wafer whilst in the epi-chamber. This same stress also causes the initial glide of the surface half-loop into the epilayer and through the advancing epilayer surface. These mobile BPD segments provide screw oriented segments that pierce the advancing epilayer surface that initially replicate as the crystal grows. Once critical thickness is reached, according to the Mathews-Blakeslee model [1], these screw segments glide sideways under the action of the mismatch stress leaving IDs and HLAs in their wake. The origin of the mismatch stress is shown to be associated with lattice parameter differences at the growth temperature, arising from the differences in doping concentration between substrate and epilayer.

Keywords

defectschemical vapor deposition (CVD) (deposition)x-ray diffraction (XRD)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1741: Symposium AA – Synthesis, Processing and Mechanical Properties of Functional Hexagonal Materials , 2015 , mrsf14-1741-aa13-02
Copyright
Copyright © Materials Research Society 2015 

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