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Zinc Nitride Films by Reactive Sputtering of Zn in N2-Containing Atmosphere

Published online by Cambridge University Press:  01 July 2011

Nanke Jiang ,
Daniel G. Georgiev ,
Ahalapitiya H. Jayatissa  and
Ting Wen
Nanke Jiang
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Daniel G. Georgiev
Affiliation:
Department of Electrical Engineering and Computer Science, University of Toledo, Toledo, OH 43606, U.S.A.
Ahalapitiya H. Jayatissa
Affiliation:
Department of Mechanical, Industrial and Manufacturing Engineering, University of Toledo, Toledo, OH 43606, U.S.A.
Ting Wen
Affiliation:
Department of Mechanical, Industrial and Manufacturing Engineering, University of Toledo, Toledo, OH 43606, U.S.A.
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Abstract

Fabrication, microstructure, chemical bonding and composition, and optical properties of zinc nitride films are investigated in this work. The films were deposited by reactive magnetron rf sputtering of zinc in N2-Ar ambient. Based on X-ray diffraction data, the as-deposited films are polycrystalline with cubic zinc nitride structure and (400) preferred orientation. Well defined Zn-N, N-N, as well as Zn-O and H-O bonding configurations are revealed by X-ray photoelectron spectroscopy data. The as-deposited films are found to be almost-stoichiometric and contain only a small fraction of oxygen. A direct band gap of 1.5 eV is obtained by using the photon energy dependence of the optical absorption of the films. This result is confirmed independently by spectroscopic ellipsometry.

Keywords

x-ray photoelectron spectroscopy (XPS)nitrideoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1324: Symposium D – Compound Semiconductors for Energy Applications and Environmental Sustainability , 2011 , mrss11-1324-d16-07
Copyright
Copyright © Materials Research Society 2011

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References

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