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Characterizing process semiconductor thin films with a confocal micro X-ray fluorescence microscope

Published online by Cambridge University Press:  01 March 2012

Chris M. Sparks ,
Elizabeth P. Hastings ,
George J. Havrilla  and
Michael Beckstead
Chris M. Sparks
Affiliation:
ATDF, 2706 Montopolis Drive, Austin, Texas 78741
Elizabeth P. Hastings
Affiliation:
Los Alamos National Laboratory, Mail Stop K484, Los Alamos, New Mexico 87545
George J. Havrilla
Affiliation:
Los Alamos National Laboratory, Mail Stop K484, Los Alamos, New Mexico 87545
Michael Beckstead
Affiliation:
Los Alamos National Laboratory, Mail Stop K484, Los Alamos, New Mexico 87545
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Abstract

The versatility of confocal micro X-ray fluorescence (MXRF) in analyzing thin films on semiconductor wafers is demonstrated. Unlike conventional MXRF, confocal MXRF can depth profile sample layers and reduce spectral background. Nondestructive quantification of the silicon dioxide concentration in hafnium silicate thin films is an example of one application demonstrating the advantage of confocal MXRF. Additionally, the growth of titanium nitride films on various high-k gate dielectric substrates was analyzed with confocal MXRF due to its ability to detect sub-nm film thickness changes.

Information

Type
X-Ray Fluorescence and Related Techniques
Information
Powder Diffraction , Volume 21 , Issue 2 , June 2006 , pp. 145 - 147
Copyright
Copyright © Cambridge University Press 2006

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References

Choi, K., Lysaght, P., Alshareef, H., Huffman, C., Wen, H.-C., Harris, R., Luan, H., Hung, P.-Y., Sparks, C., Cruz, M., Matthews, K., Majhi, P., and Lee, B. H. (2005). Thin Solid Films THSFAP 486, 141–144.CrossRefGoogle Scholar
Ding, X., Gao, N., and Havrilla, G. (2000). Proc. SPIE PSISDG 4144, 174–182.CrossRefGoogle Scholar
Havrilla, G. J. and Miller, T. (2004). Powder Diffr. PODIE2 10.1154/1.1752947 19, 119–126.CrossRefGoogle Scholar
Singer, P. (2003). Semicond. Int. , SITLDD July issue, p. 46.Google Scholar
Sparks, C. M., Lysaght, P., and Rhoad, T. (2005). Powder Diffr. PODIE2 10.1154/1.1913721 20, 161–164.CrossRefGoogle Scholar
Zeitzoff, P., Murto, R., and Huff, H. (2002). Solid State Technol. SSTEAP 45, 71–76.Google Scholar