No CrossRef data available.
Article contents
On the need for a specified reference value for room temperature
Published online by Cambridge University Press: 10 January 2013
Abstract
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
- Type
- Letters to the Editor
- Information
- Copyright
- Copyright © Cambridge University Press 1995
References
Dutta, B. N. (1962). “Lattice Constants and Thermal Expansion of Silicon up to 900 °C by X-ray Method,” Phys. Status Solidi 2, 984–987.CrossRefGoogle Scholar
GBB860-87 (1987). The State Standard of the People's Republic of China No. GB8360-87.Google Scholar
Gibbons, D. F. (1958). “Thermal Expansion of Some Crystals with the Diamond Structure,” Phys. Rev. 112 (1), 136–140.CrossRefGoogle Scholar
Gray, H. J., and Isaacs, A., Eds. (1975). A New Dictionary of Physics (Longman Group Limited, 1975, London).Google Scholar
Hartwig, J., Bak-Misiuk, J., Berger, H., Bruhl, H. G., Okada, Y., Grosswig, S., Wokulska, K., and Wolf, J. (1994). “Comparison of Lattice Parameters Obtained from an Internal Silicon Monocrystal Standard,” Phys. Status Solidi A 142, 19–26.CrossRefGoogle Scholar
Klein, P. H., and Croft, W. J. (1967). “Thermal Conductivity, Diffusivity, and Expansion of Y2O3, Y3Al5O12, and LaF3 in the Range 77–300 K,” J. Appl. Phys. 38 (4), 1603–1607.CrossRefGoogle Scholar
Liu, F. C. (1993). “Confirmation of the New Technique for Measuring the Linear Thermal Expansion of Silicon,” Powder Diffr. 8, 36–38.Google Scholar
Liu, F. C. (1994). “Influence of Thermal Expansion Coefficient on the Lattice Parameter of Silicon,” Powder Diffr. 9, 260–264.CrossRefGoogle Scholar
C., Lu Z., Xian, Y. Z., and Shen, B. G. (1994). “Thermal Expansion Properties of Fe-based Nanocrystalline Alloys,” Acta Physica Sinica 43 (5), 799–802.Google Scholar
Nan, S., and Yi-Huan, L. (1964). “X-ray Measurement of the Thermal Expansion of Germanium, Silicon, Indium Antimonide, and Gallium Arsenide,” Acta Phys. Sinica 20 (8), 699–703.Google Scholar
Okada, Y., and Tokumaru, Y. (1984). “Precise Determination of Lattice Parameter and Thermal Expansion Coefficient of Silicon between 300 and 1500 K,” J. Appl. Phys. 56 (2), 314–320.CrossRefGoogle Scholar
Parrish, W. (1960). “Results of the I.U.Cr. Precision Lattice-Parameter Project,” Acta Crystallogr. 13, 838–850.CrossRefGoogle Scholar
Qin, X. Y. (1995). “Thermal Expansion Behavior of Nanocrystalline Ag at High Temperature,” Acta Phys. Sinica 44 (2), 244–250.Google Scholar
White, G. K. (1973). “Thermal Expansion of Reference Materials: Copper, Silica, and Silicon,” J. Phys. D 6, 2070–2078.Google Scholar
Windisch, D., and Becker, P. (1990). “Silicon Lattice Parameters as an Absolute Scale of Length for High Precision Measurements of Fundamental Constants,” Phys. Status Solidi A 118, 379–388.CrossRefGoogle Scholar
Yates, B., and Panter, C. H. (1962). “Thermal Expansion of Alkali Halides at Low Temperature,” Proc. Phys. Soc. London 80, 373–382.CrossRefGoogle Scholar
Yu, C. W., He, P. M., Xu, Y. B., Qi, Z. F., and Li, W. Z. (1995). “Growth of C70 Single Crystals with a Linear Temperature Gradient,” Acta Phys. Sinica 44 (3), 488–491.Google Scholar
You have
Access