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6.—Electron Diffraction and Electron Mobility in Non-polar Crystals

Published online by Cambridge University Press:  14 February 2012

W. Cochran
W. Cochran
Affiliation:
Department of Physics, University of Edinburgh.
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Synopsis

It is shown that the mobility of electrons in silicon or germanium can be estimated in a relatively simple manner. The scattering scross-section of a ’beam’ of electrons in the conduction band is evaluated in the same way as for a beam of X-rays or of slow neutrons which is scattered by phonons. It therefore involves the atomic scattering factor for electrons rather than the deformation potential introduced by Bardeen and Shockley. Predicted mobilities are in satisfactory agreement with observation.

Type
Research Article
Information
Proceedings of the Royal Society of Edinburgh Section A: Mathematics , Volume 70 , 1972 , pp. 63 - 66
Copyright
Copyright © Royal Society of Edinburgh 1972

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References

References to Literature

Bardeen, J. and Shockley, W., 1950. ‘Deformation potentials and mobilities in non-polar crystals’, Phys. Rev., 80, 72–80.Google Scholar
Cochran, W., 1966. ‘X-ray scattering by phonons’, 153–159. In Phonons in Perfect Lattices and in Lattices with Point Imperfections. Ed. Stevenson, R. W. H.. Oliver and Boyd, Edinburgh.Google Scholar
Ibers, J. A., 1958. ‘Atomic scattering amplitudes for electrons’, Acta Crystallogr., 11, 178–183.Google Scholar
Lonsdale, K., 1962. International Tables for X-ray Crystallography. Kynoch Press, Birmingham. 3, 218–219.Google Scholar
McKelvey, J. P., 1966. Solid State and Semiconductor Physics. Harper and Row, New York.Google Scholar